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姓名:赵桂娟

						赵桂娟,女,博士,副教授。2008年7月毕业于浙江大学材料科学与工程专业,获得工学学士学位;后免试进入中国科学院半导体研究所硕博连读,并于2013年7月获中国科学院大学材料物理与化学专业工学博士学位。2013年7月-2018年9月在中国科学院半导体研究所任助理研究员;2018年9月加入兰州大学物理科学与技术学院任副教授。主要从事宽禁带半导体材料及其器件的理论和实验研究、MOCVD生长技术研究等工作。目前主持国家自然基金面上项目和青年项目各一项,作为核心成员参与自然基金面上项目、重大仪器研制项目和国家重点研发计划等多项。在III族氮化物半导体材料的物性模拟、MOCVD外延生长,III族氮化物黄绿光至深紫外波段发光器件等方面开展了深入研究,取得了一系列创新研究成果,先后在Appl. Phys. Lett.、Scientific Reports、Nanoscale、J. Appl. Phys.等国际核心期刊发表论文二十余篇,获得授权和申请的国家发明专利数项。
					

						(1)III族氮化物半导体材料和器件(发光器件、探测器件、电子电力器件)研究;
(2)新型半导体光电器件设计制备技术研究。

					
						1)	Guijuan Zhao, Lianshan Wang*, Huijie Li, Yulin Meng, Fangzheng Li, Shaoyan Yang, Zhanguo Wang, Structural and optical properties of semi-polar (11–22) InGaN/GaN green light-emitting diode structure, Applied Physics Letters, 2018, 112:052105
2)	Guijuan Zhao, Huijie Li, Lianshan Wang*, Yulin Meng, Fangzheng Li, Hongyuan Wei, Shaoyan Yang,·Zhanguo Wang, Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy, Applied Physics A: Materials Science & Processing, 2018, 124:130
3)	Guijuan Zhao*, Huijie Li, Lianshan Wang*, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, ShaoyanYang, Zhanguo Wang, Anisotropically biaxial strain in non-polar (11-20) plane InxGa1−xN/GaN layers investigated by X-ray reciprocal space mapping. Scientific Reports, 2017, 7: 4497
4)	Guijuan Zhao*, Xiaoqing Xu, Huijie Li, Hongyuan Wei, Dongyue Han, Zesheng Ji, Yulin Meng, Lianshan Wang*, Shaoyan Yang, The immiscibility of InAlN ternary alloy, Scientific Reports, 2016, 6: 26600
5)	Guijuan Zhao, Lianshan Wang*, Shaoyan Yang, Huijie Li, Hongyuan Wei, Dongyue Han, Zhanguo Wang, Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers, Scientific Reports, 2016, 6: 20787
6)	Guijuan Zhao*, Shaoyan Yang*, Guipeng Liu, Changbo Liu, Ling Sang, Chengyan Gu, Xianglin Liu, Hongyuan Wei, Qinsheng Zhu, Zhanguo Wang, Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial layers on r-plane sapphire extracted from X-Ray diffraction, Chinese Physics Letters, 2013, 30: 098102
7)	Guijuan Zhao*, Zhiwei Li, Hongyuan Wei, Guipeng Liu, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, Zhanguo Wang, Growth and characterization of an a-plane InxGa1−xN on a r-plane sapphire, Chinese Physics Letters, 2012, 29:117103
8)	Lianshan Wang*, Guijuan Zhao, Yulin Meng, Huijie Li, Shaoyan Yang, and Zhanguo Wang, Comparative Investigation of Semi polar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers, Journal of Nanoscience and Nanotechnology, 2018, 18:7446 – 7450 
9)	Huijie Li*, Guijuan Zhao, Susu Kong, Dongyue Han, Hongyuan Wei, Lianshan Wang, Zhen Chen and Shaoyan Yang*, Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays, Nanoscale, 2015, 7: 16481-16492
10)	Huijie Li*, Guijuan Zhao, Hongyuan Wei, Lianshan Wang, Zhen Chen, Shaoyan Yang*, Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates, Nanoscale Research Letters, 2016 11: 270 
11)	Huijie Li*, Guijuan Zhao, Lianshan Wang, Zhen Chen, Shaoyan Yang, Morphology Controlled Fabrication of InN Nanowires on Brass Substrates, Nanomaterials, 2016, 6: 195 
12)	Huijie Li*, Guijuan Zhao, Guipeng Liu, Hongyuan Wei, Chunmei Jiao, Shaoyan Yang*, Lianshan Wang, Qinsheng Zhu,Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces,Journal of Applied Physics, 2014,115: 193704
13)	Changbo Liu*, Guijuan Zhao, Guipeng Liu, Yafeng Song, Heng Zhang, Dongdong Jin, Zhiwei Li, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu*, Zhanguo Wang,Scattering due to large cluster embedded in quantum wells,Applied Physics Letters, 2013,102: 052105

					
						(1)国家自然科学基金面上项目, Si图形衬底上非极性/半极性GaN材料外延生长及物性研究, 61874108,2019.1-2022.12,在研,主持;
(2)国家自然科学基金青年项目,面向新型绿光发光器件的非极性InGaN量子点材料生长技术研究,61504129,2016.01-2018.12,结题,主持;