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姓名:冯娟娟

						冯娟娟,2011年06月获得兰州大学理学博士学位,凝聚态物理专业。攻读博士学位期间研究方向为:1.利用超高真空系统扫描隧道显微镜(STM)研究石墨烯纳米带(Graphene Nanoribbon)边缘(类型,手性)对其几何结构,电子结构的影响。2,低维半导体纳米材料(Si, SnS2)的制备,晶体结构的表征及其生长机制。3,纳米材料(Si, SnS2)的光致发光,气敏特性及其在锂电池材料方面的应用。目前主要从事锡基硫化物作为锂离子电池负极材料的制备与性能研究。
					

						锡基硫化物作为锂离子电池负极材料的制备与性能研究
					
						本科教学:近代物理实验;《科研训练Ⅰ》和《科研训练Ⅱ》。
					
						1. Xiaowei Zhang, Oleg V. Yazyev, Juanjuan Feng, Liming Xie, Chenggang Tao, Yen-Chia Chen, Liying Jiao, Zahra Pedramrazi, Alex Zettl, Steven G. Louie, Hongjie Dai, and Michael F. Crommie, Experimentally Engineering the Edge Termination of Graphene Nanoribbons. ACS NANO, 7(1),198-202 (2013)( co-first author)
2. Chenggang Tao, Liying Jiao, Oleg V. Yazyev, Yen-Chia Chen, Juanjuan Feng, Xiaowei. Zhang, Rodrigo B. Capaz, James M. Tour, Alex Zettl, Steven G. Louie1, Hongjie Dai, Michael F. Crommie, Spatially Resolving Edge States of Chiral Graphene Nanoribbons. Nature Physics, 7, 616-620 (2011)
3. J.J. Feng, J. T. Chen, B. S. Geng, H. T. Feng, H. J. Li, D. Y, R. F. Zhuo, S. Cheng, Z. G. Wu, P. X. Yan, Two-dimensional hexagonal SnS2 nanoflakes: fabrication, characterization, and growth mechanism. Appl Phys A, 103 (2011) 413-419 
4. J.J. Feng, P. X. Yan, Q. Yang, J. T. Chen, D. Yan, Sn-filled Si nanotubes fabricated by the facile DC arc discharge method and their photoluminescence property.
Journal of Crystal Growth, 310 (2008) 4412–4416 
5. J.J. Feng, P.X. Yan, R.F. Zhuo, J.T. Chen, D. Yan, H.T. Feng, H.J. Li, Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control.
Journal of Alloys and Compounds, 475 (2009) 551–554